BDW83, BDW83a, BDW83b, BDW83c, BDW83d npn silicon power darlingtons
1 august 1978 - revised september 2002 specifications are subject to change without notice. designed for complementary use with bdw84, bdw84a, bdw84b, bdw84c and bdw84d 150 w at 25c case temperature 15 a continuous collector current minimum h fe of 750 at 3 v, 6 a sot-93 package (top view) pin 2 is in electrical contact with the mounting base. mdtraaa b c e 1 2 3 absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. these values apply when the base-emitter diode is open circuited. 2. derate linearly to 150c case temperature at the rate of 1.2 w/c. 3. derate linearly to 150c free air temperature at the rate of 28 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = 5 ma, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = 20 v. rating symbol value unit collector-base voltage (i e = 0) BDW83 BDW83a BDW83b BDW83c BDW83d v cbo 45 60 80 100 120 v collector-emitter voltage (i b = 0) (see note 1) BDW83 BDW83a BDW83b BDW83c BDW83d v ceo 45 60 80 100 120 v emitter-base voltage v ebo 5v continuous collector current i c 15 a continuous base current i b 0.5 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 150 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 3.5 w unclamped inductive load energy (see note 4) ?li c 2 100 mj operating junction temperature range t j -65 to +150 c operating temperature range t stg -65 to +150 c operating free-air temperature range t a -65 to +150 c
BDW83, BDW83a, BDW83b, BDW83c, BDW83d npn silicon power darlingtons 2
august 1978 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = 30 ma i b = 0 (see note 5) BDW83 BDW83a BDW83b BDW83c BDW83d 45 60 80 100 120 v i ceo collector-emitter cut-off current v ce = 30 v v ce = 30 v v ce = 40 v v ce = 50 v v ce = 60 v i b =0 i b =0 i b =0 i b =0 i b =0 BDW83 BDW83a BDW83b BDW83c BDW83d 1 1 1 1 1 ma i cbo collector cut-off current v cb = 45 v v cb = 60 v v cb = 80 v v cb = 100 v v cb = 120 v v cb = 45 v v cb = 60 v v cb = 80 v v cb = 100 v v cb = 120 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 150c t c = 150c t c = 150c t c = 150c t c = 150c BDW83 BDW83a BDW83b BDW83c BDW83d BDW83 BDW83a BDW83b BDW83c BDW83d 0.5 0.5 0.5 0.5 0.5 5 5 5 5 5 ma i ebo emitter cut-off current v eb = 5 v i c =0 2 ma h fe forward current transfer ratio v ce = 3 v v ce = 3 v i c = 6 a i c =15 a (see notes 5 and 6) 750 100 20000 v be(on) base-emitter voltage v ce = 3 v i c = 6 a (see notes 5 and 6) 2.5 v v ce(sat) collector-emitter saturation voltage i b = 12 ma i b = 150 ma i c = 6 a i c =15 a (see notes 5 and 6) 2.5 4 v v ec parallel diode forward voltage i e = 15 a i b = 0 3.5 v thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 0.83 c/w r ja junction to free air thermal resistance 35.7 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = 10 a v be(off) = -4.2 v i b(on) = 40 ma r l = 3 ? i b(off) = -40 ma t p = 20 s, dc 2% 0.9 s t off turn-off time 7s
BDW83, BDW83a, BDW83b, BDW83c, BDW83d npn silicon power darlingtons 3
august 1978 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a 05 20 10 10 h fe - typical dc current gain 70000 100 1000 10000 tcs140ag t c = -40c t c = 25c t c = 100c v ce = 3 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a 05 20 10 10 v ce(sat) - collector-emitter saturation voltage - v 0 05 10 15 20 tcs140ah t p = 300 s, duty cycle < 2% i b = i c / 100 t c = -40c t c = 25c t c = 100c base-emitter saturation voltage vs collector current i c - collector current - a 05 20 10 10 v be(sat) - base-emitter saturation voltage - v 0 05 10 15 20 25 30 tcs140ai t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2%
BDW83, BDW83a, BDW83b, BDW83c, BDW83d npn silicon power darlingtons 4
august 1978 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v 10 10 100 1000 i c - collector current - a 01 10 10 100 sas140ab BDW83 BDW83a BDW83b BDW83c BDW83d maximum power dissipation vs case temperature t c - case temperature - c 0 25 50 75 100 125 150 p tot - maximum power dissipation - w 0 20 40 60 80 100 120 140 160 tis140ab
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